Zetian Mi awarded $7.5M MURI for research on ferroelectric nitrides
A new type of ferroelectric semiconductor could enable microelectronic devices and circuits for high-temperature environments, from space missions close to the Sun to electric vehicle engines, as well as ultrafast memory for applications in AI and quantum computing. Researchers in Michigan Engineering are developing the materials and devices to demonstrate these improved capabilities through a $7.5M, five year Multidisciplinary University Research Initiatives (MURI) entitled NanoTOP: Nanoscale and Transduction-Optimized Pristine Ferroelectrics.
“One major aspect of this MURI is to study some of the basic issues of these newly discovered semiconductors, which can potentially lead to next-generation microelectronic devices and circuits operating at incredibly high temperatures and speeds and with much reduced size and improved efficiency,” said Zetian Mi, professor of Electrical and Computer Engineering, and lead PI on the project.
The researchers will produce these semiconductors by incorporating rare earth elements into commonly-used semiconductor materials like gallium nitride or aluminum nitride. When the rare earth element is added, the fixed polarization of the material becomes switchable, controlled by the application of an electric field to the material. This allows the efficient storage of data in the polarization state, even when the device is switched off or the electrical field is removed.
“Light can switch these materials a million times faster than in current electronics, enabling completely new prospects for AI and quantum applications alike,” said co-PI Mack Kira.
The MURI team also aims to enhance the nonlinear optical properties and stability of the ferroelectric material, while reducing its energy loss and the electric field intensity required to switch the polarization. These objectives may be achieved during the production process, when the ferroelectric material is “grown,” or deposited as high-purity crystals onto an existing surface. Mi and his collaborators will leverage quantum-material and -dynamics theory to guide material and photonics engineering, realized with state-of-the-art synthesis including plasma-assisted molecular beam epitaxy and metal-organic chemical vapor deposition.
“This material has the potential to enable a quantum transduction for quantum photonic integrated circuits that will be able to convert light efficiently from ultraviolet-visible to infrared, as is needed to flexibly connect future quantum computers and sensors,” Mi said.
“These quantum mechanisms can be optimized to potentially switch memories at the clock speed of a light oscillation, enabling lossless ultrafast transitions between electronic states essential for next-generation AI and quantum applications,“ added Kira.
Quantum transduction could increase quantum computing power by seamlessly connecting a network of quantum computers and sensors through fiber-optic wires that support infrared light, although some quantum devices themselves operate in the microwave frequency range. Ultrafast switching could also increase computing speeds by a millionfold, enabling electronics to switch faster than scattering occurs and potentially paving the way for quantum information integration in traditional computers. Mi and Kira envision both advancements could take place on a single semiconductor chip––a much more space and energy efficient model than previously possible.
The research will be conducted with additional MURI collaborators Manos Kioupakis and Robert Hovden at Michigan, as well as Hongping Zhao (Ohio State University), Alan Doolittle (Georgia Institute of Technology), Susan Trolier-McKinstry (Pennsylvania State University), and Hong Tang (Yale University).